# What is the peak potential?

## What is the peak potential?

The potential at which the current reaches a maximum (or minimum) during an electron transfer event is referred to as the peak potential, or Ep.

## What is onset oxidation potential?

the onset potential is indeed the potential at which current starts to rise (a reaction starts taking place), however, overpotential is the difference between an applied potential and the standard reduction potential for the reaction you are studying.

## What is the half wave potential?

Half-wave potential (E1/2) is a potential at which polarographic wave current is equal to one half of diffusion current (id). In a given supporting electrolyte, the half-wave potential is unique for each element and its different valence states and chemical forms.

## What is the difference between drift and diffusion?

Summary. Drift current is electric current due to the motion of charge carriers under the influence of an external electric field while diffusion current is electric current due to the diffusion of carriers leading to a change in carrier concentration.

## What is diffusion length in a PN junction?

Diffusion length is the average length a carrier moves between generation and recombination. Semiconductor materials that are heavily doped have greater recombination rates and consequently, have shorter diffusion lengths.

## What do you mean by diffusion length?

The diffusion length is the average distance that the excess carriers can cover before they recombine. Diffusion length depends on the lifetime and mobility of the carriers.

## What is the SI unit of electron diffusion constant?

What is the SI unit of electron diffusion constant? =m2/s. =108A/cm2.

## What is minority carrier lifetime?

The minority carrier lifetime is defined as the average time it takes an excess minority carrier to recombine. It is strongly dependent on the magnitude and type of recombination processes in the semiconductor.

## What is the range of the carrier lifetime?

The carrier lifetime of commercial n-type SiC epitaxial wafers is about 1–2 μs at room temperature, and it exhibits a gradual increase with elevating the temperature.